FDS6576
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6576
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT P-Channel number of channels:1 2.5 W -20 V Continuous Drain Current (ID):11 A 60 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 14 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -11 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -830 mV |
| Number of Channels | 1 |
| Input capacitance | 4.044 nF |
| Continuous Drain Current (ID) | 11 A |
| Rds On Max | 14 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 124 ns |
| Element Configuration | Single |
| Fall Time | 79 ns |
| Rise Time | 17 ns |
| Dual Supply Voltage | -20 V |
| Gate Charge | 60 nC |
| Drain to Source Resistance | 14 mΩ |
| Nominal Vgs | -830 mV |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
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